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SSM6P25TU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
SSM6P25TU
High Speed Switching Applications
Unit: mm * * Optimum for high-density mounting in small packages Low on-resistance: Ron = 260m (max) (@VGS = -4 V) Ron = 430m (max) (@VGS = -2.5 V)
0.65 0.65 2.00.1 1.30.1 1 2 3
Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating -20 12 -0.5 -1.5 500 150 -55~150 Unit V V A mW C C
2.10.1 1.70.1 +0.1 0.3-0.05
6 5 4
(Q1, Q2 Common)
Absolute Maximum Ratings (Ta = 25C)
0.70.05
1.Source1 2.Gate1 3.Drain2
4.Source2 5.Gate2 6.Drain1
UF6
Note:
JEDEC Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA temperature, etc.) may cause this product to decrease in the TOSHIBA 2-2T1B reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the Weight: 7.0 mg (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on FR4 board. (total dissipation) 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm )
Marking
6 5 4
Equivalent Circuit (top view)
6 5 4
PH
1 2 3
Q1 Q2 1 2 3
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
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+0.06 0.16-0.05
SSM6P25TU
Electrical Characteristics (Ta = 25C) (Q1, Q2 Common)
Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source on-resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS V (BR) DSX IDSS Vth Yfs RDS (ON) Ciss Crss Coss ton toff Test Condition VGS = 12V, VDS = 0 ID = -1 mA, VGS = 0 ID = -1 mA, VGS = +12 V VDS = -20 V, VGS = 0 VDS = -3 V, ID = -0.1 mA VDS = -3 V, ID = -0.25 A ID = -0.25 A, VGS = -4 V ID = -0.25 A, VGS = -2.5 V (Note2) (Note2) (Note2) Min -20 -8 -0.5 0.65 Typ. 1.3 210 310 218 42 52 16 15 Max 1 -1 -1.1 260 430 Unit A V A V S m pF pF pF ns
VDS = -10 V, VGS = 0, f = 1 MHz VDS = -10 V, VGS = 0, f = 1 MHz VDS = -10 V, VGS = 0, f = 1 MHz VDD = -10 V, ID = -0.25 A, VGS = 0~-2.5 V, RG = 4.7
Note2: Pulse test
Switching Time Test Circuit
(a) Test circuit
0 IN RG RL VDD -2.5 V 90%
OUT
(b) VIN
0V
10%
-2.5V
10 s
(c) VOUT
VDS (ON)
90% 10% tr ton toff tf
VDD = -10 V RG = 4.7 < D.U. = 1% VIN: tr, tf < 5 ns Common Source Ta = 25C
VDD
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID=-100 A for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on)) Please take this into consideration when using the device.
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SSM6P25TU
ID - VDS
-1600 -1400 Drain current ID (mA) -1200 -1000 -800 -600 -400 -200 0 0 -0.2 -0.4 -0.6 -0.8 -1 Drain-Source voltage VDS (V)
ID - VGS -10000
-5.0
-3.0 -2.0 -4.0 -1.8 Drain current ID (mA)
- 1000 -100 - 10 -1 - 0.1 - 0.01 0 -1 -2 Gate-Source voltage VGS (V) -3 Ta=100C 25 -25C Common Source VDS=-3V
VGS=-1.6 Common Source Ta=25C
500
RDS(ON) - ID
500
RDS(ON) - VGS Common Source ID=-250mA
Drain-Source on-resistance RDS(ON) (m)
300
-2.5V
Drain-Source on-resistance RDS(ON) (m)
400
400
300
200
VGS=-4V
200
Ta=100C 25C -25C
100
100
0
0 -200 -400 -600 -800
Common Source Ta=25C
-1000 -1200 -1400 -1600
0 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 Gate-Source voltage VGS (V)
Drain current ID (mA)
500
RDS(ON) - Ta Common Source ID=-250mA
-1
Vth - Ta
Drain-Source on-resistance RDS(ON) (m)
400
-2.5V
Gate threshold voltage Vth(V)
-0.8
300
-0.6
VGS=-4V
200
-0.4
100
-0.2
Common Source ID=-0.1mA VDS=-3V
20 40 60 80 100 120 140 160 Ambient temperature Ta (C)
0 -60 -40 -20 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C)
0 -60 -40 -20 0
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SSM6P25TU
10
|Yfs| - ID
1600 Drain reverse current IDR (mA) 1400 1200 1000 800 600 400 200 0 -100 -1000 -10000 0.0 0.2 Drain current ID (mA)
IDR - VDS Common Source VGS=0V Ta=25C
Forward transfer admittance |Yfs| (S)
25C
1
-25C Ta=100C
Common Source VDS=-3V Ta=25C
0 -10
0.4 0.6 0.8 Drain-Source voltage VDS (V)
1.0
1000
C - VDS
1000
t - ID Common Source VDD=-10V VGS=0~-2.5V Ta=25C
Capacitance C (pF)
Ciss
100
Switching time t (ns)
toff
100
tf ton tr
Common Source VGS=0V f=1MHz Ta=25C 10 -0
Coss Crss
10
-1 -10 Drain-Source voltage VDS (V)
-100
1 -10
-100 -1000 Drain current ID (mA)
-10000
PD* - Ta
1000 t=10s mounted FR4 board (25.4mm*25.4mm*1.6t Cu Pad :645mm2)
Drain power dissipation PD* (mW)
800
600
DC
400
200
0 0 20
*:Total Rating
40 60 80 100 120 140 Ambient temperature Ta()
160
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SSM6P25TU
rth - tw rth (C/W )
1000 Single pulse Mounted on FR4 board 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm )
Transient thermal impedance
100
10
1 0.001
0.01
0.1
1
10
100
1000
Pulse width
tw
(s)
5
2007-11-01
SSM6P25TU
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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2007-11-01

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